rej03g0164-0300 rev.3.00 oct 19, 2007 page 1 of 5 HAT1069C silicon p channel power mos fet power switching rej03g0164-0300 rev.3.00 oct 19, 2007 features ? low on-resistance r ds(on) = 38 m ? typ (at v gs = ?4.5 v) ? high speed switching ? capable of 1.8 v gate drive ? high density mounting outline renesas package code: pwsf0006ja-a (package name: cmfpak-6) 1. source 2. drain 3. drain 4. drain 5. drain 6. gate g d s 6 1 5 d 2 d 3 d 4 1 2 3 6 5 4 index band absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?12 v gate to source voltage v gss 8 v drain current i d ?4 a drain peak current i d(pulse) note1 ?16 a body-drain diode reverse drain current i dr ?4 a channel dissipation pch note2 900 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the grass epoxy board. (fr4 40 40 1.6 mm)
HAT1069C rej03g0164-0300 rev.3.00 oct 19, 2007 page 2 of 5 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?12 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 8 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 6.4 v, v ds = 0 zero gate voltage drain current i dss ? ? ?1 a v ds = ?12 v, v gs = 0 gate to source cutoff voltage v gs(off) ?0.3 ? ?1.2 v v ds = ?10 v, i d = ?1 ma r ds(on) ? 38 52 m ? i d = ?1.5 a, v gs = ?4.5 v r ds(on) ? 48 70 m ? i d = ?1.5 a, v gs = ?2.5 v static drain to source on state resistance r ds(on) ? 60 93 m ? i d = ?1.5 a, v gs = ?1.8 v forward transfer admittance |y fs | 5 8 ? s i d = ?1.5 a, v ds = ?10 v input capacitance ciss ? 1380 ? pf output capacitance coss ? 235 ? pf reverse transfer capacitance crss ? 115 ? pf v ds = ?10 v v gs = 0 f = 1 mhz total gate charge qg ? 16 ? nc gate to source charge qgs ? 3 ? nc gate to drain charge qgd ? 6.2 ? nc v ds = ?10 v v gs = ?4.5 v i d = ?3 a turn-on delay time t d(on) ? 35 ? ns rise time t r ? 150 ? ns turn-off delay time t d(off) ? 490 ? ns fall time t f ? 350 ? ns v gs = ?4 v, i d = ?1.5 a v dd ? ?10 v r l = 6.6 ? r g = 4.7 ? body?drain diode forward voltage v df ? ?0.8 ?1.1 v i f = ?4 a, v gs = 0 note3 notes: 3. pulse test
HAT1069C rej03g0164-0300 rev.3.00 oct 19, 2007 page 3 of 5 main characteristics drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics ?16 ?12 ?8 ?4 0 ?2 ?4 ?6 ?8 ?10 ?16 ?12 ?8 ?4 0 0 ?1 ?2 ?5 ?4 ?3 25 c 75 c v ds = ?10 v pulse test v gs = ?1.8 v ?10 v ?2.5 v ?3 v ?4.5 v pulse test ?2 v ?2.2 v tc = ?25 c channel dissipation pch (mw) ambient temperature ta ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area note 4: when using the glass epoxy board (fr4 40 40 1.6 mm) 1600 1200 800 400 0 0 50 100 150 200 ?0.1 ?100 ?10 ?1 ?0.1 ?0.01 ?1 ?10 ?100 10 s pw = 10 ms operation in this area is limited by r ds(on) dc operation note4 ta = 25 c 1 shot pulse 1 ms 100 s test condition: when using the glass epoxy board (fr4 40 40 1.6 mm) gate to source voltage v gs (v) drain to source voltage v ds(on) (mv) drain to source saturation voltage vs. gate to source voltage ?100 ?150 ?200 ?50 ?250 0 ?2 ?4 ?6 ?10 ?8 ta = 25 c ?4.0 a drain current i d (a) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. drain current 10 1 ?0.1 ?1 ?10 1000 100 v gs = ?1.8 v ?2.5 v ?4.5 v pulse test ta = 25 c ?1.5 a ?1.0 a
HAT1069C rej03g0164-0300 rev.3.00 oct 19, 2007 page 4 of 5 case temperature tc ( c) static drain to source on state resistance vs. temperature forward transfer admittance |yfs| (s) drain current i d (a) forward transfer admittance vs. drain current ?25 25 075 50 100 125 150 20 40 60 80 100 120 v gs = ?4.5 v ?3 ?0.1 ?1 ?10 ?0.3 10 100 1 0.1 tc = ?25 c v ds = ?10 v 75 c 25 c pulse test pulse test i d = ?4 a, ?1.5 a, ?1 a ?1 a ?1.5 a ?4 a drain to source on state resistance r ds(on) (m ? ) ?2.5 v ?1.8 v drain current i d (a) switching time t (ns) switching characteristics 1000 100 10 ?1 ?100 ?10 ?0.1 t f t r t d(off) t d(on) v gs = ?4.5 v, v dd = ?10 v source to drain voltage v sd (v) reverse drain current i dr (a) ?12 ?16 ?8 ?4 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 reverse drain current vs. source to drain voltage ta = 25 c ?5 v v gs = 0, 5 v capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 0?4 ?2 ?8 ?10 ?6 ?12 10000 1000 100 10 ciss coss crss v gs = 0 f = 1 mhz ?16 ?8 0 0 10 20 ?8 ?4 0 i d = ?3 a gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics v dd = ?10, ?12 v ?7 v ?5 v pulse test v dd = ?12 v ?10 v ?5 v ?7 v ?1 a ?4 a ?1.5 a
HAT1069C rej03g0164-0300 rev.3.00 oct 19, 2007 page 5 of 5 package dimensions d a aa a a a 2 a 1 l l p s s s y b b 2 l 1 m x eh e e e e 1 c pattern of terminal position areas a a 1 a 2 b c d e e h e l l p x y b 2 e 1 l 1 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 0.2 0.15 2.0 1.7 0.65 2.1 0.2 1.65 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 dimension in millimeters reference symbol min nom max ? 0.0065g mass[typ.] cmfpak-6 / cmfpak-6v pwsf0006ja-a renesas code jeita package code previous code b a-a section c package name cmfpak-6 ordering information part name quantity shipping container HAT1069C-el-e 3000 pcs taping
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